Abstract: High temperature reverse bias (HTRB) testing is widely used to assess the reliability of commercial SiC MOSFETs. This study investigates 1700V planar SiC MOSFETs before and after packaging ...
Abstract: This article reports an investigation into the impact of P+ body design in 4H-silicon carbide (SiC) MOSFETs. Specifically, 1.2 kV SiC MOSFETs with various P+ body designs were fabricated and ...
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