Abstract: GaN-based digital integrated circuits (ICs) are realized on a 6-inch GaN-on-Si power high-electron-mobility transistor (HEMT) platform by monolithic ...
Abstract: In this letter, an on-chip electrostatic discharge (ESD) protection device was proposed for high-speed I/O interface circuits. A resistor-triggered silicon-controlled rectifier device with ...
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Bengals' Evan McPherson Credits 12 Men in the Stands for Bolstering Redemption Arc That Led to Game-Winning Kick
CINCINNATI – Somewhat lost in the euphoria of Ja’Marr Chase’s franchise-record performance, Tee Higgins’ hook slide and Joe Flacco’s Ponce de Leon impersonation Thursday night was the continued growth ...
While electric vehicles generally have a big ol’ lithium battery containing heaps of kilowatt-hours of energy slung under its floor, most of them still require an old-school 12-volt battery to ...
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