X-FAB Silicon Foundries SE is building on its expertise in GaN processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 ...

Reference design can control two commonly used power converter types with a single MCU Rohm’s has announced a new reference design (REF67004) capable of controlling two commonly used power converter ...

Companies to collaborate on epitaxial wafers for high voltage power electronics applications This partnership aims to accelerate the development and commercialisation of Ga 2 O 3 devices for power ...

Diodes Inc has introduces the AP74502Q and AP74502HQ automotive-compliant 80V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications ...

CFP15B package offers a compact and cost-efficient alternative to MJD series in DPAK package Nexperia has announced the expansion of its bipolar junction transistor (BJTs) portfolio by introducing 12 ...

Device targets fast compact devices featuring large-capacity batteries that require bidirectional protection Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for customers in Q4 of 2025. This means it is the first semiconductor manufacturer ...

New products save space, cut costs and maintain signal integrity with ultra-low device capacitance even at higher data rates Nexperia has introduced what are believed to be the industry’s first ESD ...

4th-generation plus devices combine high-efficiency GaN technology with a silicon-compatible gate drive input Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server ...

HULV series now rated for a maximum junction temperature of 175°C and 800 V reverse voltage Panjit has announced the HULV series of ultra-low VF bridge rectifiers, now rated for a maximum junction ...

New device targets high power and next generation systems for use in space EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...